BLF6G22LS-100,112
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produsen:
Ampleon USA Inc.
Deskripsi:
RF Power Discrete Transistors
Kategori:
Semikonduktor elektronik
Spesifikasi
Kategori Produk ::
Penguat RF
Gain (dB) ::
18.2
Output Power (W) ::
100
Frequency Min (GHz) ::
2.11
Process ::
LDMOS
Frequency Max (GHz) ::
2.17
Manufacturer ::
Ampleon USA Inc.
Pengantar
BLF6G22LS-100,112, dari Ampleon USA Inc., adalah RF Amplifier. apa yang kami tawarkan memiliki harga yang kompetitif di pasar global, yang berada di bagian asli dan baru.Jika Anda ingin tahu lebih banyak tentang produk atau menerapkan harga yang lebih rendah, silakan hubungi kami melalui online chat atau kirim penawaran kepada kami!
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| Gambar | Bagian # | Deskripsi | |
|---|---|---|---|
|
|
BLA9H0912L-250U |
RF Power Discrete Transistors
|
|
|
|
C4H10P600AY |
RF Power Discrete Transistors
|
|
|
|
BLF8G22LS-160BV,11 |
RF Power Discrete Transistors
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|
|
|
BLP10H660PGY |
RF Power Discrete Transistors
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|
|
|
BLS7G2730LS-200PU |
RF Power Discrete Transistors
|
|
|
|
BLP05H6700XRY |
RF Power Discrete Transistors
|
|
|
|
BLS9G2731LS-400U |
RF Power Discrete Transistors
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|
BLC10G22XS-400AVTZ |
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|
|
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|
BLC9G27XS-380AVTZ |
RF Power Discrete Transistors
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|
BLF984PSU |
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