BLP10H660PGY
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produsen:
Ampleon USA Inc.
Deskripsi:
Transistor Diskrit Daya RF
Kategori:
Semikonduktor elektronik
Spesifikasi
Product Category ::
RF Amplifier
Peningkatan (dB)::
17
Output Power (W) ::
60
Frequency Min (GHz) ::
0.1
Process ::
LDMOS
Frekuensi Max (GHz)::
1
Manufacturer ::
Ampleon USA Inc.
Pengantar
BLP10H660PGY,dari Ampleon USA Inc., adalah RF Amplifier. apa yang kami tawarkan memiliki harga yang kompetitif di pasar global,yang berada di bagian asli dan baru.Jika Anda ingin tahu lebih banyak tentang produk atau menerapkan harga yang lebih rendah, silakan hubungi kami melalui online chat atau kirim penawaran kepada kami!
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| Gambar | Bagian # | Deskripsi | |
|---|---|---|---|
|
|
BLA9H0912L-250U |
RF Power Discrete Transistors
|
|
|
|
C4H10P600AY |
RF Power Discrete Transistors
|
|
|
|
BLF8G22LS-160BV,11 |
RF Power Discrete Transistors
|
|
|
|
BLS7G2730LS-200PU |
RF Power Discrete Transistors
|
|
|
|
BLP05H6700XRY |
RF Power Discrete Transistors
|
|
|
|
BLS9G2731LS-400U |
RF Power Discrete Transistors
|
|
|
|
BLC10G22XS-400AVTZ |
RF Power Discrete Transistors
|
|
|
|
BLF6G22LS-100,112 |
RF Power Discrete Transistors
|
|
|
|
BLC9G27XS-380AVTZ |
RF Power Discrete Transistors
|
|
|
|
BLF984PSU |
RF Power Discrete Transistors
|
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